BC817K-16 datasheet(3/11 Pages) INFINEON

Teilenummer	BC817K-16

Bauteilbeschribung	NPN Silicon AF Transistor

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Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 11 page

2008-04-11

3

BC817.../BC818...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC817...

IC = 10 mA, IB = 0 , BC818...

V(BR)CEO

45

25

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC817...

IC = 10 µA, IE = 0 , BC818...

V(BR)CBO

50

30

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

V

Collector-base cutoff current

VCB = 25 V, IE = 0

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

50

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

-

100

nA

DC current gain1)

IC = 100 mA, VCE = 1 V, hFE-grp.16

IC = 100 mA, VCE = 1 V, hFE-grp.25

IC = 100 mA, VCE = 1 V, hFE-grp.40

IC = 300 mA, VCE = 1 V, hFE-grp.162)

IC = 300 mA, VCE = 1 V, hFE-grp.252)

IC = 300 mA, VCE = 1 V, hFE-grp.402)

IC = 500 mA, VCE = 1 V, all hFE-grps.3)

hFE

100

160

250

60

100

170

40

160

250

350

-

250

400

630

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

-

0.7

V

Base emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VBEsat

-

1.2

1Pulse test: t < 300µs; D < 2%

2For all BC817 and BC818 subtypes

3For all BC817K and BC818K subtypes

Ähnliche Teilenummer - BC817K-16

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	BC817K-16	863Kb / 11P	NPN Silicon AF Transistor 2011-09-19
Nexperia B.V. All right...	BC817K-16	350Kb / 24P	45 V, 500 mA NPN general-purpose transistors
	BC817K-16	350Kb / 24P	45 V, 500 mA NPN general-purpose transistors Rev. 2 - 6 March 2018
	BC817K-16H	366Kb / 21P	45 V, 500 mA PNP general-purpose transistors Rev. 1 - 5 March 2019
	BC817K-16H	371Kb / 25P	45 V, 500 mA NPN general-purpose transistors Rev. 1 - 15 December 2017

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