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BF799W Datenblatt(PDF) 2 Page - Infineon Technologies AG

Teilenummer BF799W
Bauteilbeschribung  NPN Silicon RF Transistor
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BF799W Datenblatt(HTML) 2 Page - Infineon Technologies AG

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2007-04-20
2
BF799W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
20
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO
30
-
-
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
3
-
-
Collector-base cutoff current
VCB = 20 V, IE = 0
ICBO
-
-
100
nA
DC current gain
IC = 5 mA, VCE = 10 V
IC = 20 mA, VCE = 10 V
hFE
35
40
95
100
-
250
-
Collector-emitter saturation voltage
IC = 20 mA, IB = 2 mA
VCEsat
-
0.1
0.3
V
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA
VBEsat
-
-
0.95
AC characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
IC = 20 mA, VCE = 8 V, f = 100 MHz
fT
-
-
800
1100
-
-
MHz
Output capacitance
VCB = 10 V, IE = 0 mA, f = 1 MHz
Cob
-
0.96
-
pF
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
-
0.7
-
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Cce
-
0.28
-
Noise figure
IC = 5 mA, VCE = 10 V, f = 100 MHz,
ZS = 50 Ω
F
-
3
-
dB
Output conductance
IC = 20 mA, VCE = 10 V, f = 35 MHz
g22e
-
60
-
µS


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