LS3550C_SOT-23 datasheet(1/1 Pages) MICROSS

Teilenummer	LS3550C_SOT-23

Bauteilbeschribung	Linear Systems Monolithic Dual PNP Transistor

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FEATURES

EXCELLENT THERMAL TRACKING ≤ 15µV/°C

TIGHT VBE MATCHING

|VBE1 – VBE2 | ≤10mV

ABSOLUTE MAXIMUM RATINGS

1

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature ‐65°C to +150°C

Operating Junction Temperature ‐55°C to +150°C

Maximum Power Dissipation

Continuous Power Dissipation

TBD

Maximum Currents

Collector Current

10mA

Maximum Voltages

Collector to Collector Voltage

80V

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNITS

CONDITIONS

|VBE1 – VBE2 |

Base Emitter Voltage Differential

‐‐

10

mV

IC = ‐10mA, VCE = ‐5V

∆|(VBE1 – VBE2)| / ∆T

Base Emitter Voltage Differential

Change with Temperature

‐‐

15

µV/°C

IC = ‐10mA, VCE = ‐5V

TA = ‐40°C to +85°C

|IB1 – IB2 |

Base Current Differential

‐‐

10

nA

IC = ‐10µA, VCE = ‐5V

|∆ (IB1 – IB2)|/∆T

Base Current Differential

Change with Temperature

‐‐

1.0

nA/°C

IC = ‐10µA, VCE = ‐5V

TA = ‐40°C to +85°C

hFE1 /hFE2

DC Current Gain Differential

‐‐

15

%

IC = 10µA, VCE = 5V

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

MIN.

TYP.

MAX.

UNITS

CONDITIONS

BVCBO

Collector to Base Voltage ‐20

‐‐

V

IC = 10µA, IE = 0

BVCEO

Collector to Emitter Voltage ‐20

‐‐

V

IC = 10µA, IB = 0

BVEBO

Emitter‐Base Breakdown Voltage ‐6.2

‐‐

V

IE = 10µA, IC = 0

2

BVCCO

Collector to Collector Voltage ‐80

‐‐

V

IC = 10µA, IE = 0

hFE

DC Current Gain

50

‐‐

IC = ‐1mA, VCE = ‐5V

40

‐‐

IC = ‐10mA, VCE = ‐5V

40

‐‐

IC = ‐100mA, VCE = ‐5V

VCE(SAT)

Collector Saturation Voltage

‐‐

‐1.2

V

IC = ‐100mA, IB = ‐10mA

IEBO

Emitter Cutoff Current

‐‐

‐0.2

nA

IE = 0, VCB = ‐3V

ICBO

Collector Cutoff Current

‐‐

‐0.2

nA

IE = 0, VCB = ‐20V

COBO

Output Capacitance

‐‐

2

pF

IE = 0, VCB = ‐10V

CC1C2

Collector to Collector Capacitance

‐‐

2

pF

VCC = 0V

IC1C2

Collector to Collector Leakage Current

‐‐

‐1

nA

VCC = ±80V

fT

Current Gain Bandwidth

Product(Current)

‐‐

600

MHz

IC = ‐1mA, VCE = ‐5V

NF

Narrow Band Noise Figure

‐‐

3

dB

IC = ‐100µA, VCE = ‐5V, BW=200Hz, RG= 10Ω,

f = 1KHz

Notes:

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.

LS3550C

MONOLITHIC DUAL

PNP TRANSISTOR

LS3550C Features:

Tight matching

Low Output Capacitance

The LS3550C is a monolithic pair of PNP transistors

mounted in a single SOT-23 package. The monolithic

dual chip design reduces parasitics and gives better

performance while ensuring extremely tight matching.

The 6 Pin SOT-23 provides ease of manufacturing, and

a lower cost assembly option.

(See Packaging Information).

Linear Systems Monolithic Dual PNP Transistor

Available Packages:

LS3550C in SOT-23

LS3550C available as bare die

Please contact Micross for full package and die dimensions:

Email: chipcomponents@micross.com

Web: www.micross.com/distribution.aspx

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