Datenblatt-Suchmaschine für elektronische Bauteile |
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LS846_PDIP Datenblatt(PDF) 1 Page - Micross Components |
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LS846_PDIP Datenblatt(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES LOW LEAKAGE IG = 15pA TYP. LOW NOISE en = 3nV/√Hz TYP. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +135°C Maximum Voltage and Current– Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VGDS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 350mW @ +125°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVGSS Breakdown Voltage 60 ‐‐ ‐‐ V VDS = 0 ID=1nA YfSS TRANSCONDUCTANCE Full Conduction 1500 ‐‐ ‐‐ µmho VDG= 15V VGS= 0V f = 1kHz YfS Typical Operation 1000 1500 ‐‐ µmho VDG= 15V ID= 500µA IDSS DRAIN CURRENT Full Conduction 1.5 5 15 mA VDG= 15V VGS= 0V VGS(off) or Vp GATE VOLTAGE Pinchoff voltage 1 ‐‐ 3.5 V VDS= 15V ID= 1nA VGS(on) Operating Range 0.5 ‐‐ 3.5 V VDS=15V ID=500µA ‐IGmax. GATE CURRENT Operating ‐‐ 15 50 pA VDG= 15V ID= 500µA ‐IGmax. High Temperature ‐‐ ‐‐ 50 nA TA= +125°C ‐IGmax. Reduced VDG ‐‐ 5 30 pA VDG = 3V ID= 500µA ‐IGSSmax. At Full Conduction ‐‐ ‐‐ 100 pA VDG= 15V , VDS =0 YOSS OUTPUT CONDUCTANCE Full Conduction ‐‐ ‐‐ 20 µmho VDG= 15V VGS= 0V YOS Operating ‐‐ 0.2 2 µmho VDG= 15V ID= 500µA NF NOISE Figure ‐‐ ‐‐ 0.5 dB VDS= 15V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz en Noise Voltage ‐‐ 3 7 nV/√Hz VDS=15V ID=500µA f=1KHz NBW=1Hz CISS CAPACITANCE Input ‐‐ ‐‐ 8 pF VDS= 15V, ID=500µA VDG= 15V, ID=500µA CRSS Reverse Transfer ‐‐ ‐‐ 3 LS846 N-CHANNEL JFET Linear Systems Low Leakage Low Noise JFET The LS846 is a high-performance JFET featuring extremely low noise and low leakage and is targeted for use in a wide range of precision instrumentation applications. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Available Packages: LS846 / LS846 in PDIP & SOIC LS846 / LS846 available as bare die Please contact Micross for full package and die dimensions Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution LS846 Applications: Wideband Differential Amps High-Speed,Temp-Compensated Single- Ended Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. PDIP & SOIC (Top View) |
Ähnliche Teilenummer - LS846_PDIP |
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Ähnliche Beschreibung - LS846_PDIP |
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