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SDT10S60 Datenblatt(PDF) 1 Page - Infineon Technologies AG

Teilenummer SDT10S60
Bauteilbeschribung  Silicon Carbide Schottky Diode
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SDT10S60 Datenblatt(HTML) 1 Page - Infineon Technologies AG

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200
8-06-02
Rev. 2.
2
Page 1
SDT10S60
SDT10S60
thinQ!
 SiC Schottky Diode
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• No forward recovery
Product Summary
VRRM
600
V
Qc
29
nC
IF
10
A
P
G-TO220-2-2.
Pin 1
Pin 2
C
A
Type
Package
Ordering Code
SDT10S60
P
G-TO220-2-2.
Q67040S4643
Marking
D10S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous forward current, T
C=100°C
IF
10
A
RMS forward current
, f=50Hz
IFRMS
14.1
Surge non repetitive forward current, sine halfwave
TC=25°C, tp=10ms
IFSM
31
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM
39
Non repetitive peak forward current
tp=10µs, TC=25°C
IFMAX
100
i 2t value
, T
C=25°C, tp=10ms
∫i2dt
4.8
A²s
Repetitive peak reverse voltage
VRRM
600
V
Surge peak reverse voltage
VRSM
600
Power dissipation
, T
C=25°C
Ptot
75
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C


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