Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC1675 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC1675 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page 2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 24-Feb-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Collector Current General Purpose Switching and Amplification CLASSIFICATION OF hFE Product-Rank 2SC1675-R 2SC1675-O 2SC1675-Y Range 40~80 70~140 120~240 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 50 mA Collector Power Dissipation PC 625 mW Thermal Resistance From Junction To Ambient RθJA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=10μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=5mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=10μA, IC=0 Collector Cut – Off Current ICBO - - 100 nA VCB=50V, IE=0 Emitter Cut – Off Current IEBO - - 100 nA VEB=5V, IC=0 DC Current Gain hFE 40 - 240 VCE=6V, IC=1mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 V IC=10mA, IB=1mA Base to Emitter voltage VBE - - 0.75 V VCE=6V, IC=1mA Transition Frequency fT 150 - - MHz VCE=6V, IC=1mA Collector Output Capacitance Cob - - 2.5 pF VCB=6V, IE=0, f=1MHz Emitter Base Collector TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 |
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