Datenblatt-Suchmaschine für elektronische Bauteile |
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KDS123V Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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KDS123V Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
1 / 3 page 2007. 10. 31 1/3 SEMICONDUCTOR TECHNICAL DATA KDS123V SILICON EPITAXIAL PLANAR DIODE Revision No : 0 ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS A B D E VSM 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 C G H J K 0.2 0.05 B E 2 3 1 P P P 5 1. CATHODE 2 2. ANODE 1 3. ANODE 2 / CATHODE 1 + _ + _ + _ + _ + _ + _ + _ + _ 3 2 D1 D2 1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300* mA Average Forward Current IO 100* mA Surge Current (10mS) IFSM 2* A Power Dissipation PD 100 mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=100mA - - 1.2 V Reverse Current IR VR=80V - - 0.1 A Total Capacitance CT VR=6V, f=1MHz - - 3.5 pF Type Name Marking U S * Unit Rating. Total Rating=Unit Rating 0.7 |
Ähnliche Teilenummer - KDS123V |
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Ähnliche Beschreibung - KDS123V |
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