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KF10N60P Datenblatt(PDF) 4 Page - KEC(Korea Electronics)

Teilenummer KF10N60P
Bauteilbeschribung  N CHANNEL MOS FIELD EFFECT TRANSISTOR
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Hersteller  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KF10N60P Datenblatt(HTML) 4 Page - KEC(Korea Electronics)

  KF10N60P_10 Datasheet HTML 1Page - KEC(Korea Electronics) KF10N60P_10 Datasheet HTML 2Page - KEC(Korea Electronics) KF10N60P_10 Datasheet HTML 3Page - KEC(Korea Electronics) KF10N60P_10 Datasheet HTML 4Page - KEC(Korea Electronics) KF10N60P_10 Datasheet HTML 5Page - KEC(Korea Electronics) KF10N60P_10 Datasheet HTML 6Page - KEC(Korea Electronics) KF10N60P_10 Datasheet HTML 7Page - KEC(Korea Electronics)  
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2010. 8. 16
4/7
KF10N60P/F
Revision No : 0
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
0
12
10
6
2
4
8
35
40
15
5
25
20
30
10
0
Fig8. Qg- VGS
Fig9. Safe Operation Area
101
102
101
102
103
104
10
1
10-1
100
10
0
10
2
10
2
10
3
Drain - Source Voltage VDS (V)
Fig10. Safe Operation Area
0
10
2
6
14
8
4
12
75
150
125
50
100
25
(KF10N60P)
(KF10N60F)
ID=10A
C
Junction Temperature Tj ( )
Fig11. ID - Tj
Operation in this
area is limited by RDS(ON)
VDS = 480V
VDS = 300V
VDS = 120V
Tc= 25
Tj = 150
Single pulse
C
C
DC
10ms
1ms
100
µs
10
µs
Fig 7. C - VDS
Drain - Source Voltage VDS (V)
0
10203040
Crss
Coss
Ciss
101
102
10
1
10-1
100
10
0
10
2
10
2
10
3
Operation in this
area is limited by RDS(ON)
Tc= 25
Tj = 150
Single pulse
C
C
DC
10
µs
100
µs
10ms
1ms


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