Datenblatt-Suchmaschine für elektronische Bauteile |
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FMC10N60E Datenblatt(PDF) 2 Page - Fuji Electric |
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FMC10N60E Datenblatt(HTML) 2 Page - Fuji Electric |
2 / 5 page 2 FMC10N60E 2 FUJI POWER MOSFET 0 5 10 15 20 0 5 10 15 20 20V VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10V 5.0V 6.0V 4.5V VGS=4.0V 2 3 4 5 6 10 -4 10-3 10 -2 10 -1 100 10 1 VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0.01 0.1 1 10 100 0.01 0.1 1 10 100 ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0 5 10 15 20 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 4.5V ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 6V 20V 5V VGS=4.0V 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 Allowable Power Dissipation PD=f(Tc) Tc [°C] 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 DC t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform VDS [V] Safe Operating Area I =f(V ):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 1ms 100µs D DS |
Ähnliche Teilenummer - FMC10N60E |
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Ähnliche Beschreibung - FMC10N60E |
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