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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FMH19N60ES Datenblatt(PDF) 2 Page - Fuji Electric |
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FMH19N60ES Datenblatt(HTML) 2 Page - Fuji Electric |
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2 / 5 page  2 FMH19N60ES 2 FUJI POWER MOSFET 0 4 8 12 16 20 24 0 10 20 30 40 50 7.5V 8.0V VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10V 7.0V 6.5V VGS=6.0V 0 2 4 6 8 10 12 0.1 1 10 100 VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0.1 1 10 100 0.1 1 10 100 ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 Allowable Power Dissipation PD=f(Tc) Tc [°C] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform VDS [V] D DS Safe Operating Area I =f(V ):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 1ms 100µs 0 5 10 15 20 25 30 35 40 0.25 0.30 0.35 0.40 0.45 0.50 6.5V ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 8V 20V 7V VGS=6.0V |
Ähnliche Teilenummer - FMH19N60ES |
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Ähnliche Beschreibung - FMH19N60ES |
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