FMI06N60ES datasheet(4/5 Pages) FUJI

Teilenummer	FMI06N60ES

Bauteilbeschribung	N-CHANNEL SILICON POWER MOSFET

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Hersteller	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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4 / 5 page

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FMI06N60ES

FUJI POWER MOSFET

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I

AS=2.4A

I

AS=3.6A

I

AS=6.0A

starting Tch [ C]

Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6A

10-6

10-5

10-4

10-3

10-2

10-1

100

10-3

10

-2

10

-1

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0

10

1

Maximum Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

t [sec]

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FMI06N60ES Datenblatt(PDF) 4 Page - Fuji Electric

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