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SEMICONDUCTOR

TECHNICAL DATA

KMB080N75PA

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 2

General Description

It s mainly suitable for low voltage applications such as automotive,

DC/DC converters and a load switch in battery powered applications

FEATURES

Drain-Source ON Resistance :

MOSFET MAXIMUM RATING (Ta=25

Unless otherwise noted)

DIM

MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8

0.1

+

_

2.8

0.1

+

_

2.54

0.2

+

_

1.27

0.1

+

_

1.4

0.1

+

_

13.08

0.3

+

_

3.6

0.2

+

_

+

_

9.9

0.2

+

_

9.2

0.2

+

_

4.5

0.2

+

_

2.4

0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

L

E

I

I

O

C

H

NN

Q

D

Q

P

P

1. GATE

2. DRAIN

3. SOURCE

12

3

G

D

S

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

75

V

Gate-Source Voltage

25

V

Drain Current

DC

80

A

Pulsed (Note 1)

320

A

Drain-Source Diode Forward Current

80

A

Drain Power Dissipation

300

W

Maximum Junction Temperature

-55

175

Storage Temperature Range

-55

175

Note1) Pulse Test : Pulse width

10 S Duty cycle

1%

CHARACTERISTIC

SYMBOL

RATING

UNIT

Thermal Resistance, Junction-to-Ambient

62.5

/W

Thermal Resistance, Junction-to-Case

0.5

/W

Thermal Characteristics

Equivalent Circuit