Datenblatt-Suchmaschine für elektronische Bauteile |
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SDB1080PI Datenblatt(PDF) 2 Page - KODENSHI_AUK CORP. |
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SDB1080PI Datenblatt(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 5 page KSD-D0O036-000 2 Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM VRWM VR 80 V Maximum average forward rectified current per diode IF(AV) 5 A total device 10 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 120 A Storage temperature range Tstg -45℃ to +150℃ ℃ Maximum operating junction temperature Tj 150 ℃ Thermal Characteristics Characteristic Symbol Value Unit Maximum thermal resistance junction to case per diode Rth(j-c) 5.0 ℃ /W total device 4.5 Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop VFM (1) IFM = 5A Tj=25℃ - - 0.75 V Tj=125℃ - - 0.65 V Reverse leakage current IRM (1) VR = VRRM Tj=25℃ - - 0.3 mA Tj=125℃ - - 50 mA Junction capacitance Cj VR = 5VDC, f=1MHz - 150 - pF Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% SDB1080PI |
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