Datenblatt-Suchmaschine für elektronische Bauteile |
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SDZ6V8D Datenblatt(PDF) 2 Page - KODENSHI_AUK CORP. |
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SDZ6V8D Datenblatt(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 5 page Rev. date: 22-NOV-10 KSD-D6C028-000 www.auk.co.kr 2 of 5 Absolute Maximum Ratings (T amb=25℃, Unless otherwise specified) Characteristic Symbol Ratings Unit Power dissipation 1) PD 200 mW Operating junction temperature TJ 150 C Storage temperature range Tstg -55 ℃ to +150C C 1) Device mounted on FR-4 board with recommended pad layout. Thermal Characteristics (T amb=25℃, Unless otherwise specified) Characteristic Symbol Ratings Unit Thermal resistance, junction to ambient 1) Rth(j-a) 625 C/W 1) Device mounted on FR-4 board with recommended pad layout. Electrical Characteristics (T amb=25℃, Unless otherwise specified) Characteristic Symbol Test Condition Min. Typ. Max. Unit Zener voltage VZ IZ=5mA 6.50 - 7.10 V Dynamic impedance ZZT IZ=5mA - - 8 KNEE dynamic impedance ZZK IZ=0.25mA - - 750 Reverse leakage current IR VR=5.2V - - 1 A SDZ6V8D |
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Ähnliche Beschreibung - SDZ6V8D |
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