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MJE4343 Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer MJE4343
Bauteilbeschribung  High?뭋oltage  High Power Transistors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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High−Voltage
High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
High Collector−Emitter Sustaining Voltage —
NPN
PNP
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ)
Low Collector−Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC
= 8.0 Adc
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
160
Vdc
Collector−Base Voltage
VCB
160
Vdc
Emitter−Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak (1)
IC
16
20
Adc
Base Current — Continuous
IB
5.0
Adc
Total Power Dissipation @ TC = 25_C
PD
125
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
_C/W
(1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%.
3.5
0
Figure 1. Power Derating
Reference: Ambient Temperature
TA, AMBIENT TEMPERATURE (°C)
25
50
100
125
3.0
2.5
0.5
75
150
1.0
1.5
2.0
ON Semiconductor
t
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
1
Publication Order Number:
MJE4343/D
MJE4343
MJE4353
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
NPN
PNP
CASE 340D−02
TO−218 TYPE


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