BDX33B datasheet(1/6 Pages) ONSEMI

Teilenummer	BDX33B

Bauteilbeschribung	Darlington Complementary Silicon Power Transistors

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Hersteller	ONSEMI [ON Semiconductor]

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November, 2007 - Rev. 12

1

Publication Order Number:

BDX33B/D

BDX33B, BDX33C* (NPN)

BDX34B, BDX34C* (PNP)

BDX33C and BDX34C are Preferred Devices

Darlington Complementary

Silicon Power Transistors

These devices are designed for general purpose and low speed

switching applications.

Features

• High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0

• Collector-Emitter Sustaining Voltage at 100 mAdc

VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B

= 100 Vdc (min) - BDX33C, BDX334C

• Low Collector-Emitter Saturation Voltage

VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc

- BDX33B, 33C/34B, 34C

• Monolithic Construction with Build-In Base-Emitter Shunt Resistors

• Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCEO

80

100

Vdc

Collector-Base Voltage

BDX33B, BDX34B

BDX33C, BDX34C

VCB

80

100

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current

- Continuous

- Peak

IC

10

15

Adc

Base Current

IB

0.25

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

70

0.56

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

-65 to +150

°C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction-to-Case

RqJC

1.78

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON

10 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80-100 VOLTS, 65 WATTS

TO-220AB

CASE 221A-09

STYLE 1

1

http://onsemi.com

MARKING DIAGRAM

BDX3xy =

Device Code

x = 3 or 4

y = B or C

A

=

Assembly Location

Y

=

Year

WW

=

Work Week

G

=

Pb-Free Package

2

3

BDX3xyG

AY WW

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Preferred devices are recommended choices for future use

and best overall value.

Ähnliche Beschreibung - BDX33B

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