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BCP5116TA Datenblatt(PDF) 2 Page - Diodes Incorporated

Teilenummer BCP5116TA
Bauteilbeschribung  PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
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BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 2 – 2
2 of 7
www.diodes.com
June 2011
© Diodes Incorporated
BCP 51 / 52 / 53
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Symbol
BCP51
BCP52
BCP53
Unit
Collector-Base Voltage
VCBO
-45
-60
-100
V
Collector-Emitter Voltage
VCEO
-45
-60
-80
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1
A
Peak Pulse Collector Current
ICM
-2
Continuous Base Current
IB
-100
mA
Peak Pulse Base Current
IBM
-200
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
PD
2
W
Thermal Resistance, Junction to Ambient (Note 4)
RθJA
62
°C/W
Thermal Resistance, Junction to Leads (Note 5)
RθJL
19.4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Notes:
4. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).


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