Datenblatt-Suchmaschine für elektronische Bauteile |
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2SCR544D Datenblatt(PDF) 1 Page - Rohm |
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2SCR544D Datenblatt(HTML) 1 Page - Rohm |
1 / 6 page www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching Applications Driver Inner circuit Package CPT3 Code TL Basic ordering unit (pieces) 2500 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6V DC IC 2.5 A Pulsed ICP 5A PD 1W PD 10 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a substrate. *3 Tc=25℃ Packaging specifications Type Parameter Collector current Power dissipation *1 *2 *3 (1) Base (2) Collector (3) Emitter (1) (3) (2) CPT3 6.5 2.3 (2) (3) 0.65 (1) 0.75 2.3 0.9 5.1 2.3 0.5 1.0 0.5 1/5 2010.07 - Rev.A |
Ähnliche Teilenummer - 2SCR544D |
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Ähnliche Beschreibung - 2SCR544D |
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