2SD2537_11 datasheet(1/3 Pages) ROHM

Teilenummer	2SD2537

Bauteilbeschribung	Medium Power Transistor (25V, 1.2A)

Download	3 Pages

Scroll/Zoom	100%

Hersteller	ROHM [Rohm]

Direct Link	http://www.rohm.com

Logo

1 / 3 page

1/2

www.rohm.com

○

c

2011.05 - Rev.D

1.5

0.4

1.6

0.5

3.0

0.4

1.5

(3)

(2)

(1)

4.5

ROHM : MPT3

EIAJ : SC-62

2SD2537

(1) Base

(2) Collector

(3) Emitter

Medium Power Transistor (25V, 1.2A)

2SD2537



Features



Dimensions (Unit : mm)

1) High DC current gain.

2) High emitter-base voltage. (VEBO=12V)

3) Low saturation voltage.

(Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)



Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

30

25

12

1.2

2

150

−55 to +150

Unit

V

A (DC)

A (Pulse)

W

°C

∗1 Single pulse Pw

=10ms

∗2 When mounted on a 40×40×0.7mm ceramic board.

Storage temperature

Junction temperature

Collector current

Emitter-base voltage

Collector-emitter voltage

Collector-base voltage

Collector power dissipation

∗1

∗2

0.5

W



Packaging specifications and hFE

Type

2SD2537

MPT3

V

DV

T100

1000

Package

hFE

Marking

Code

Basic ordering unit (pieces)



Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

fT

Cob

30

25

12

−

200

20

−

0.3

−

V

μA

V

820

−

1800

−

MHz

pF

IC

=10μA

IC

=1mA

IE

=10μA

VCB

=30V

VEB

=12V

IC/IB

=500mA/10mA

VCE/IC

=5V/0.5A

hFE

∗

VCE

=10V, IE=−50mA, f=100MHz

VCB

=10V, IE=0A, f=1MHz

Output capacitance

Transition frequency

Collector-emitter saturation voltage

VBE(sat)

−−

1.2

V

IC/IB

=0.5A/10mA

Base-emitter saturation voltage

Emitter cutoff current

Collector cutoff current

Emitter-base breakdown voltage

Collector-emitter breakdown voltage

Collector-base breakdown voltage

DC current transfer ratio

∗Measured using pulse current.



Electrical characteristics curves

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.1 Ground emitter output characteristics( )

0

0.4

0.8

1.2

1.6

2.0

0.1

0.2

0.3

0.4

0.5

0

Ta

=25°C

IB

=0

0.2

μA

0.4

μA

0.6

μA

0.8

μA

1.0

μA

1.2

μA

1.4

μA

1.6

μA

1.8

μA

2.0

μA

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.2 Ground emitter output characteristics (

)

0

0.4

0.8

1.2

1.6

2.0

0.1

0.2

0.3

0.4

0.5

0

IB

=0

0.5mA

5.0mA

1.0mA

1.5mA

2.0mA

2.5mA

3.0mA

3.5mA

4.0mA

4.5mA

Ta

=25°C

Pulsed

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.3 Ground emitter propagation characteristics

0

1000

2000

200

500

100

20

50

10

2

5

0.6

0.4

0.2

1.0

0.8

1.2

1.4

VCE

=5V

Pulsed

Ähnliche Beschreibung - 2SD2537_11

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Rohm	2SD2537	75Kb / 4P	Medium Power Transistor (25V, 1.2A)
	2SD2537	74Kb / 4P	Medium Power Transistor (25V, 1.2A)
	2SD2537T100V	85Kb / 3P	Medium Power Transistor (25V, 1.2A)
Diodes Incorporated	FZT1049A	787Kb / 7P	25V NPN MEDIUM POWER TRANSISTOR
	ZTX1049ASTZ	307Kb / 6P	25V NPN SILICON PLANARR MEDIUM POWER TRANSISTOR
	FCX789A	379Kb / 7P	25V PNP MEDIUM POWER TRANSISTOR IN SOT89
	FZT789ATA	535Kb / 7P	25V PNP MEDIUM POWER TRANSISTOR IN SOT223
	FZT789A	869Kb / 7P	25V PNP MEDIUM POWER TRANSISTOR IN SOT223
	FZT1149A	566Kb / 7P	25V PNP MEDIUM POWER HIGH GAIN TRANSISTOR
Maxim Integrated Produc...	MAX32010	2Mb / 31P	25V Span, 1.2A Device Power Supply (DPS) Rev 0; 11/20

More results

2SD2537 Datenblatt(PDF) 1 Page - Rohm

2SD2537 Datenblatt(HTML) 1 Page - Rohm

Ähnliche Teilenummer - 2SD2537_11

Ähnliche Beschreibung - 2SD2537_11

Html Pages

1 2 3

Datenblatt Download

Link URL