Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC4097-P Datenblatt(PDF) 1 Page - Micro Commercial Components |
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2SC4097-P Datenblatt(HTML) 1 Page - Micro Commercial Components |
1 / 3 page www.mccsemi.com 2SC4097-P 2SC4097-Q 2SC4097-R NPN Silicon Epitaxial Transistors Features Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 32 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector power dissipation 200 mW TJ, TSTG Junction and Storage Temperature -55 to +150 hFE CLASSIFICATION Rank P Q R Ramge 82~180 120~270 180~390 Marking CP CQ CR omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: A 2011/01/01 1 of 3 SOT-323 Suggested Solder Pad Layout INCHES MM DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 D .026 Nominal 0.65Nominal E .047 .055 1.20 1.40 F .012 .016 .30 .40 G .000 .004 .000 .100 H .035 .039 .90 1.00 J .004 .010 .100 .250 K .012 .016 .30 .40 A C B D E F G H J 1.90 0.70 0.90 0.65 0.65 DIMENSIONS K E B C V(BR)CBO Collector -base breakdown voltage (IC=100 µA, I E= 0) 40 V V(BR)CEO Collector-emitter breakdown voltage (IC=-1mA, IB= 0) 32 V V(BR)EBO Emitter-base breakdown voltage (IE=100 µA, Ic= 0) 5 V ICBO Collector cut-off current (VCB=20V,IE=0) 1 µA IEBO Emitter cut-off current (VEB=4V, Ic= 0) 1 µA hFE DC Current Gain (VCE=3V,IC=10mA) 82 390 VCE(sat) Collector-emitter saturation voltage (IC=100mA, IB=10mA) 0.4 V Cob Collector Output Capacitance (VCB=10V, IE=0, f=1.0MHz) 6 pF fT Transition frequency (VCE=5V, Ic=20mA,f=100MHz) 250 MHz • High Icmax. Icmax=0.5A • Low VCE(SAT). Optimal for low voltage operation. Electrical Characteristics @ 25 Unless Otherwise Specified Symbol Parameter Min Typ Max Units • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 TM Micro Commercial Components mm |
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