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74LVC2G08 Datenblatt(PDF) 8 Page - NXP Semiconductors |
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74LVC2G08 Datenblatt(HTML) 8 Page - NXP Semiconductors |
8 / 21 page 74LVC2G08 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 9 — 20 October 2010 8 of 21 NXP Semiconductors 74LVC2G08 Dual 2-input AND gate [1] Typical values are measured at nominal VCC and at Tamb = 25 °C. [2] tpd is the same as tPLH and tPHL [3] CPD is used to determine the dynamic power dissipation (PD in μW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of outputs. 12. Waveforms CPD power dissipation capacitance per gate; VI = GND to VCC [3] - 14.4 - - - pF Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max Measurement points are given in Table 9. VOL and VOH are typical output voltage levels that occur with the output load. Fig 8. Input (nA, nB) to output (nY) propagation delays mna224 nA, nB input nY output tPLH tPHL GND VI VM VM VOH VOL Table 9. Measurement points Supply voltage Input Output VCC VM VM 1.65 V to 1.95 V 0.5VCC 0.5VCC 2.3 V to 2.7 V 0.5VCC 0.5VCC 2.7 V 1.5 V 1.5 V 3.0 V to 3.6 V 1.5 V 1.5 V 4.5 V to 5.5 V 0.5VCC 0.5VCC |
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