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1N4448A0 Datenblatt(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Teilenummer 1N4448A0
Bauteilbeschribung  500mW High Speed Switching Diode
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Hersteller  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

1N4448A0 Datenblatt(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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1N4148/1N4448/1N914B
500mW High Speed Switching Diode
Small Signal Diode
Electrical Characteristics
IR=100uA
IR=5uA
Forward Voltage
1N4448, 1N914B
IF=5.0mA
1N4148
IF=10.0mA
1N4448, 1N914B
IF=100.0mA
VR=20V
VR=75V
Junction Capacitance
VR=0, f=1.0MHz
Reverse Recovery Time (Note 1)
Notes: 1. Test Conditions: IF=10mA, VR=6V,RL=100Ω, IRR=1mA
Tape & Reel specification
W1
Item
Symbol
K
E
Component Pitch
Untaped lead
Bent
Tape Mismatch
lead beyond tape
0.55(MAX)
Dimension(mm)
Overall width
A
B
Tape spacing
Reel outside diameter
0
260+/-3
D
0.69(MAX)
3.2Min
Glass offset
Taped lead
G
D2
Reel inner diameter
Feed hole width
5.08+/-0.40
+/-0.69
1.2 Max
H
F
C
L1-L2
Reel width
20+/-0.5
72+3/-1
Trr
4.0
ns
64+1.69/-0.69
48+/-1
D1
Reverse Leakage Current
IR
25
5.0
CJ
0.62
0.72
1.0
VF
pF
4.0
1.0
Min
Max
Units
Reverse Breakdown Voltage
V(BR)
100
75
52.0+/-0.69
μA
nA
V
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
V
Type Number
Symbol
E
L2
L1
F
G
H
B
A
C
K
W1
D1
D2
D
Version : D10


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