Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4448A0 Datenblatt(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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1N4448A0 Datenblatt(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 3 page 1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode Electrical Characteristics IR=100uA IR=5uA Forward Voltage 1N4448, 1N914B IF=5.0mA 1N4148 IF=10.0mA 1N4448, 1N914B IF=100.0mA VR=20V VR=75V Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 1) Notes: 1. Test Conditions: IF=10mA, VR=6V,RL=100Ω, IRR=1mA Tape & Reel specification W1 Item Symbol K E Component Pitch Untaped lead Bent Tape Mismatch lead beyond tape 0.55(MAX) Dimension(mm) Overall width A B Tape spacing Reel outside diameter 0 260+/-3 D 0.69(MAX) 3.2Min Glass offset Taped lead G D2 Reel inner diameter Feed hole width 5.08+/-0.40 +/-0.69 1.2 Max H F C L1-L2 Reel width 20+/-0.5 72+3/-1 Trr 4.0 ns 64+1.69/-0.69 48+/-1 D1 Reverse Leakage Current IR 25 5.0 CJ 0.62 0.72 1.0 VF pF 4.0 1.0 Min Max Units Reverse Breakdown Voltage V(BR) 100 75 52.0+/-0.69 μA nA V Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. V Type Number Symbol E L2 L1 F G H B A C K W1 D1 D2 D Version : D10 |
Ähnliche Teilenummer - 1N4448A0 |
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Ähnliche Beschreibung - 1N4448A0 |
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