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2N2060A Datenblatt(PDF) 2 Page - Seme LAB

Teilenummer 2N2060A
Bauteilbeschribung  DUAL MATCHED NPN SILICON TRANSISTOR
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Hersteller  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

2N2060A Datenblatt(HTML) 2 Page - Seme LAB

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DUAL MATCHED NPN SILICON TRANSISTOR
2N2060 / 2N2060A
Semelab Limited
Semelab Limited
Semelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8570
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min
Typ
Max
Units
VCB = 80V
IE = 0
0.002
ICBO
Collector-Cut-Off Current
TA = 150°C
10
µA
IEBO
Emitter Cut-off Current
VBE = 5V
IC = 0
2.0
nA
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA
IE = 0
100
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA
IC = 0
7
V(BR)CER(1)
Collector – Emitter Breakdown
Voltage
IC = 100mA
RBE ≤10Ω
80
V(BR)CEO(1)
Collector – Emitter Breakdown
Voltage
IC = 30mA
IB = 0
60
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50mA
IB = 5mA
0.9
2N2060A
IC = 50mA
IB = 5mA
0.6
2N2060
VCE(sat)
Collector - Emitter Saturation
Voltage
IC = 50mA
IB = 5mA
1.2
V
IC = 10µA
VCE = 5V
25
75
IC = 100µA
VCE = 5V
30
90
IC = 1.0mA
VCE = 5V
40
120
HFE
Forward-current transfer ratio
IC = 10mA
VCE = 5V
50
150
-
DYNAMIC CHARACTERISTICS
IC = 50mA
VCE = 10V
fT
Current Gain Bandwidth Product
f = 20MHz
60
MHz
IC = 1.0mA
VCE = 5V
hfe
Small-Signal Current Gain
f = 1.0KHz
50
150
-
IC = 1.0mA
VCE = 5V
hie(3)
Input Impedance
f = 1.0KHz
1000
4000
IC = 1.0mA
VCB = 10V
hib(3)
Input Impedance
f = 1.0KHz
20
30
VCB = 10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
15
pF
VBE = 0.5V
IC = 0
Cibo
Input Capacitance
f = 1.0MHz
85
pF
Notes
Notes
Notes
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
(2)
The lowest
HFE reading is taken as HFE1 for this ratio
(3)
Parameter by design only


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