Datenblatt-Suchmaschine für elektronische Bauteile |
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2N2060A Datenblatt(PDF) 2 Page - Seme LAB |
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2N2060A Datenblatt(HTML) 2 Page - Seme LAB |
2 / 3 page DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8570 Issue 1 Page 2 of 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min Typ Max Units VCB = 80V IE = 0 0.002 ICBO Collector-Cut-Off Current TA = 150°C 10 µA IEBO Emitter Cut-off Current VBE = 5V IC = 0 2.0 nA V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA IE = 0 100 V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA IC = 0 7 V(BR)CER(1) Collector – Emitter Breakdown Voltage IC = 100mA RBE ≤10Ω 80 V(BR)CEO(1) Collector – Emitter Breakdown Voltage IC = 30mA IB = 0 60 VBE(sat) Base-Emitter Saturation Voltage IC = 50mA IB = 5mA 0.9 2N2060A IC = 50mA IB = 5mA 0.6 2N2060 VCE(sat) Collector - Emitter Saturation Voltage IC = 50mA IB = 5mA 1.2 V IC = 10µA VCE = 5V 25 75 IC = 100µA VCE = 5V 30 90 IC = 1.0mA VCE = 5V 40 120 HFE Forward-current transfer ratio IC = 10mA VCE = 5V 50 150 - DYNAMIC CHARACTERISTICS IC = 50mA VCE = 10V fT Current Gain Bandwidth Product f = 20MHz 60 MHz IC = 1.0mA VCE = 5V hfe Small-Signal Current Gain f = 1.0KHz 50 150 - IC = 1.0mA VCE = 5V hie(3) Input Impedance f = 1.0KHz 1000 4000 IC = 1.0mA VCB = 10V hib(3) Input Impedance f = 1.0KHz 20 30 Ω VCB = 10V IE = 0 Cobo Output Capacitance f = 1.0MHz 15 pF VBE = 0.5V IC = 0 Cibo Input Capacitance f = 1.0MHz 85 pF Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) The lowest HFE reading is taken as HFE1 for this ratio (3) Parameter by design only |
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