IRF9240

IRFN9240

IRF9240SMD

Document Number 3345

Issue 2

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

–200

–2

–4

–100

100

–25

–1

–11

0.35

0.5

46

1200

570

81

28

60

3.0

15

4.5

38

35

85

85

65

5.0

12.5

Drain – Source Breakdown Voltage

Gate Threshold Voltage

Gate – Source Leakage Current (forward)

Gate – Source Leakage Current (reverse)

Zero Gate Voltage Drain Current

On State Drain Current 1

Static Drain – Source On-State Resistance

Forward Transconductance 1

Input capacitance

Output capacitance

Reverse transfer capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Characteristic

Min.

Typ.

Max.

Unit

1.0

30

300

Junction to Case

Junction to Ambient

(TO-3 package only)

Max. Lead Temperature 0.063 ” from case for 10 sec.

(TO-3 package only)

°C/W

°C/W

°C

THERMAL CHARACTERISTICS

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

–11

–44

–4.6

270

2.0

Continuous Source Current (Body Diode)

Pulsed Source Current1 (Body Diode)

Diode Forward Voltage2

Reverse Recovery Time

Reverse Recovery Charge

A

V

ns

µC

SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

f = 1MHz

V

V

nA

nA

µA

mA

A

Ω

S

pF

nC

ns

nH

nH

1) Pulse Test: Pulse Width < 300

µS , Duty Cycle ≤ 2%

2) Repetitive Rating: Pulse Width limited by maximum junction temperature.