ZY8.2 datasheet(3/3 Pages) DIOTEC

Teilenummer	ZY8.2

Bauteilbeschribung	Silicon-Power-Zener Diodes (non-planar technology)

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Hersteller	DIOTEC [Diotec Semiconductor]

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ZY1 ... ZY200 (2 W)

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3

120

100

80

60

40

20

0

[%]

P

tot

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

1

[°C]

T

A

150

100

50

0

10

1

10

2

-1

-2

[A]

I

F

Forward characteristics (typical values)

Durchlasskennlinien (typische Werte)

0.4

V

F

0.8

1.0

1.2

1.4

[V] 1.8

T = 25°C

j

T = 125°C

j

30a-(1a-1.1v)

[pF]

[V]

C

j

V

Z

T = 25°C

f = 1.0 MHz

j

V = 0V

R

V = 4V

R

V = 20V

R

V = 40V

R

Junction capacitance vs. zener voltage (typical)

Sperrschichtkapazität in Abh. v.d. Zenerspg. (typ.)

Typ. thermal resistance vs lead length

Typ. therm. Widerst. in Abh. der Anschlusslänge

50

40

30

20

10

0

R

thL

[K/W]

[mm]

L

12

8

4

0

L

0

2

3

4

5

6

7

8

10

[V]

V

Z

[mA]

50

150

0

100

I

Z

Typical breakdown characteristic

Typische Abbruchspannung

– tested with pulses

– gemessen mit Impulsen

5,6

6,2

6,8

7,5

8,2

9,1

I

ZT

I

Zmax

1

T = 25°C

j

I = 5 mA

Z

10

18

24

30

36

43

51

62

56

68

75

82

91

100

T = 25°C

j

I

ZT

I

Zmax

Typical breakdown characteristic

Typische Abbruchspannung

– tested with pulses

– gemessen mit Impulsen

Ähnliche Beschreibung - ZY8.2

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