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BC546XBK Datenblatt(PDF) 1 Page - Diotec Semiconductor

Teilenummer BC546XBK
Bauteilbeschribung  General Purpose Si-Epitaxial Planar Transistors
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Hersteller  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC546XBK Datenblatt(HTML) 1 Page - Diotec Semiconductor

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BC546xBK ... BC549xBK
BC546xBK ... BC549xBK
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
NPN
Version 2009-12-03
Dimensions - Maße [mm]
Power dissipation – Verlustleistung
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Special packaging bulk
Sonder-Lieferform Schüttgut
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC546
BC547
BC548/549
Collector-Emitter-voltage
E-B short
VCES
85 V
50 V
30 V
Collector-Emitter-voltage
B open
VCEO
65 V
45 V
30 V
Collector-Base-voltage
E open
VCBO
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
5 V
Power dissipation – Verlustleistung
Ptot
500 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 µA
hFE
typ. 90
typ. 150
typ. 270
VCE = 5 V, IC = 2 mA
hFE
110 ... 220
200 ... 450
420 ... 800
VCE = 5 V, IC = 100 mA
hFE
typ. 120
typ. 200
typ. 400
h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6 ... 4.5 kΩ
3.2 ...8.5 kΩ
6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 µS
30 < 60 µS
60 < 110 µS
Reverser voltage transfer ratio
Spannungsrückwirkung
hre
typ. 1.5*10-4
typ. 2*10-4
typ. 3*10-4
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
2 x 1.27
C B E
4.6
±0.1


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