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BC847BW Datenblatt(PDF) 1 Page - Diotec Semiconductor

Teilenummer BC847BW
Bauteilbeschribung  Surface Mount General Purpose Si-Epi-Planar Transistors
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Hersteller  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC847BW Datenblatt(HTML) 1 Page - Diotec Semiconductor

  BC847BW Datasheet HTML 1Page - Diotec Semiconductor BC847BW Datasheet HTML 2Page - Diotec Semiconductor  
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BC846W ... BC849W
BC846W ... BC849W
NPN
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
NPN
Version 2011-07-07
Dimensions - Maße [mm]
1 = B
2 = E
3 = C
Power dissipation – Verlustleistung
200 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC846W BC847W BC848W
BC849W
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
VCEO
65 V
45 V
30 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
80 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
6 V
5 V
Power dissipation – Verlustleistung
Ptot
200 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 µA
Group A
Group B
Group C
hFE
hFE
hFE
90
150
270
VCE = 5 V, IC = 2 mA
Group A
Group B
Group C
hFE
hFE
hFE
110
200
420
180
290
520
220
450
800
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
90 mV
200 mV
250 mV
600 mV
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
1.3
0.3
1±0.1
2±0.1
Type
Code
3
2
1


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