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FM24V01 Datenblatt(PDF) 1 Page - Ramtron International Corporation

Teilenummer FM24V01
Bauteilbeschribung  128Kb Serial 3V F-RAM Memory
Download  14 Pages
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Hersteller  RAMTRON [Ramtron International Corporation]
Direct Link  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM24V01 Datenblatt(HTML) 1 Page - Ramtron International Corporation

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Preliminary
This is a product that has fixed target specifications but are subject
Ramtron International Corporation
to change pending characterization results.
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Rev. 1.1
http://www.ramtron.com
Sept. 2011
Page 1 of 14
FM24V01
128Kb Serial 3V F-RAM Memory
Features
128K bit Ferroelectric Nonvolatile RAM
Organized as 16,384 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
10 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 3.4 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Device ID
Device ID reads out Manufacturer ID & Part ID
Low Voltage, Low Power Operation
Low Voltage Operation 2.0V – 3.6V
Active Current 90 A (typ. @ 100KHz)
Standby Current 80 A (typ.)
Sleep Mode Current 4 A (typ.)
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC Package
Description
The FM24V01 is a 128Kbit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
The FM24V01 performs write operations at bus
speed. No write delays are incurred. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers write
endurance
orders
of
magnitude
higher
than
EEPROM. Also, F-RAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24V01 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time
of EEPROM
can cause
data
loss.
The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24V01 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The device is
available in an industry standard 8-pin SOIC package
using a familiar two-wire (I
2C) protocol. The device
incorporates a read-only Device ID that allows the
host to determine the manufacturer, product density,
and product revision. The device is guaranteed over
an industrial temperature range of -40°C to +85°C.
Pin Configuration
A0
A1
A2
VSS
VDD
WP
SCL
SDA
1
2
3
4
8
7
6
5
Pin Name
Function
A0-A2
Device Select Address
SDA
Serial Data/address
SCL
Serial Clock
WP
Write Protect
VDD
Supply Voltage
VSS
Ground


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