Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SC681 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SC681 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC681 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.6A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 mA tf Fall Time IC= 5A; VCC= 25V 0.5 μs isc Website:www.iscsemi.cn |
Ähnliche Teilenummer - 2SC681 |
|
Ähnliche Beschreibung - 2SC681 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |