FM28V100 datasheet(7/13 Pages) RAMTRON

Teilenummer	FM28V100

Bauteilbeschribung	1Mbit Bytewide F-RAM Memory

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Hersteller	RAMTRON [Ramtron International Corporation]

Direct Link	http://www.ramtron.com

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FM28V100 - 128Kx8 FRAM

Rev. 1.2

May 2010

Page 7 of 13

Electrical Specifications

Absolute Maximum Ratings

Symbol

Description

Ratings

VDD

Power Supply Voltage with respect to VSS

-1.0V to +4.5V

VIN

Voltage on any signal pin with respect to VSS

-1.0V to +4.5V and

VIN < VDD+1V

TSTG

Storage Temperature

-55

°C to +125°C

TLEAD

Lead Temperature (Soldering, 10 seconds)

260

° C

VESD

Electrostatic Discharge Voltage

- Human Body Model (AEC-Q100-002 Rev. E)

- Charged Device Model (AEC-Q100-011 Rev. B)

- Machine Model (AEC-Q100-003 Rev. E)

2kV

1.25kV

200V

Package Moisture Sensitivity Level

MSL-3

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this

specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.

DC Operating Conditions (TA = -40

° C to +85° C, VDD = 2.0V to 3.6V unless otherwise specified)

Symbol

Parameter

Min

Typ

Max

Units

Notes

VDD

Power Supply

2.0

3.3

3.6

V

IDD

VDD Supply Current

7

12

mA

1

ISB

Standby Current – CMOS

90

150

µA

2

ILI

Input Leakage Current

±1

µA

3

ILO

Output Leakage Current

±1

µA

3

VIH

Input High Voltage

0.7 VDD

VDD + 0.3

V

VIL

Input Low Voltage

-0.3

0.3 VDD

V

VOH1

Output High Voltage (IOH = -1 mA, VDD=2.7V)

2.4

V

VOH2

Output High Voltage (IOH = -100 µA)

VDD-0.2

V

VOL1

Output Low Voltage (IOL = 2 mA, VDD=2.7V)

0.4

V

VOL2

Output Low Voltage (IOL = 150 µA)

0.2

V

RIN

Address Input Resistance (CE2)

For VIN = VIH (min)

For VIN = VIL (max)

40

1

K

Ω

M

Ω

4

Notes

1. VDD = 3.6V, CE cycling at minimum cycle time. All inputs at CMOS levels (0.2V or VDD-0.2V), all DQ pins unloaded.

2. VDD = 3.6V, /CE1 at VDD or CE2 at VSS, and all other pins at CMOS levels (0.2V or VDD-0.2V).

3. VIN, VOUT between VDD and VSS.

4. The input pull-up circuit is stronger (>40KΩ) when the input voltage is above VIH and weak (>1MΩ) when the input

voltage is below VIL.

Ähnliche Beschreibung - FM28V100

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More results

FM28V100 Datenblatt(PDF) 7 Page - Ramtron International Corporation

FM28V100 Datenblatt(HTML) 7 Page - Ramtron International Corporation

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