BA679 datasheet(2/5 Pages) VISHAY

Teilenummer	BA679

Bauteilbeschribung	RF PIN Diodes - Single in MiniMELF SOD-80

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number 85529

Rev. 1.7, 05-Aug-10

BA679, BA679S

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 20 mA

VF

1000

mV

Reverse current

VR = 30 V

IR

50

nA

Diode capacitance

f = 100 MHz, VR = 0

CD

0.5

pF

Differential forward resistance

f = 100 MHz, IF = 1.5 mA

rf

50

Ω

Reverse impedance

f = 100 MHz, VR = 0

BA679

zr

5k

Ω

BA679S

zr

9k

Ω

Minority carrier lifetime

IF = 10 mA, IR = 10 mA

τ

4µs

Figure 1. Forward Current vs. Forward Voltage

Figure 2. Differential Forward Resistance vs. Forward Current

0

0.4

0.8

1.2

1.6

0.01

0.1

1

10

100

2.0

95 9735

VF - Forward Voltage (V)

Tamb = 25 °C

Scattering Limit

0.001

0.01

0.1

1

10

100

1000

10 000

10

95 9734

IF - Forward Current (mA)

f > 20 MHz

Tj = 25 °C

Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2

- 80

- 60

- 40

- 20

0

20

f2 , modulated with 200 kHz, m = 100 % (MHz)

80

60

40

20

0

95 9733

- Circuit with 10 dB Attenuation

V0 =40dBmV

f1 = 100 MHz unmodulated

Π

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