BA1282 datasheet(1/4 Pages) VISHAY

Teilenummer	BA1282

Bauteilbeschribung	Band Switching Diodes

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Hersteller	VISHAY [Vishay Siliconix]

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Band Switching Diodes

BA1282, BA1283

Vishay Semiconductors

Document Number: 85525

For technical questions within your region, please contact one of the following:

www.vishay.com

Rev. 1.9, 05-Aug-10

Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

1

MECHANICAL DATA

Case: MicroMELF

Weight: approx. 12 mg

Cathode band color: black

Packaging codes/options:

TR3/10K per 13" reel (8 mm tape), 10K/box

TR/2.5K per 7" reel (8 mm tape), 12.5K/box

FEATURES

• Silicon planar diode

• Saving space

• Hermetic sealed parts

• Fits onto SOD-323 footprints

• Electrical data identical with the devices BA682,

BA683, BA982, BA983

• Low dynamic forward resistance

• Low diode capacitance

• High reverse impedance

• AEC-Q101 qualified

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Band switching in VHF-tuners

Note

(1) Tamb = 25 °C, unless otherwise specified

Note

(1) Tamb = 25 °C, unless otherwise specified

Note

(1) Tamb = 25 °C, unless otherwise specified

9612315

PARTS TABLE

PART

TYPE DIFFERENTIATION

ORDERING CODE

REMARKS

BA1282

VR = 35 V, rf at IF 3 mA = max. 0.7

Ω

BA1282-TR3 or BA1282-TR

Tape and reel

BA1283

VR = 35 V, rf at IF 3 mA = max. 1.2

Ω

BA1283-TR3 or BA1283-TR

Tape and reel

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Reverse voltage

VR

35

V

Forward continuous current

IF

100

mA

THERMAL CHARACTERISTICS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Junction to ambient air

Mounted on epoxy-glass hard tissue, fig. 1

35 µm copper clad, 0.9 mm2 copper area per electrode

RthJA

500

K/W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (1)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

VF

1000

mV

Reverse current

VR = 20 V

IR

50

nA

Diode capacitance

f = 100 MHz, VR = 1 V

CD1

1.5

pF

f = 100 MHz, VR = 3 V

BA1282

CD2

1.25

pF

BA1283

CD2

1.2

pF

Dynamic forward resistance

f = 200 MHz, IF = 3 mA

BA1282

rf1

0.7

Ω

BA1283

rf1

1.2

Ω

f = 200 MHz, IF = 10 mA

BA1282

rf2

0.5

Ω

BA1283

rf2

0.9

Ω

Ähnliche Beschreibung - BA1282

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	BA682-GS08	82Kb / 5P	Band Switching Diodes Rev. 1.5, 16-Mar-06
	BA682	62Kb / 3P	Band Switching Diodes Rev. 1.6, 16-Jul-10
	BA782S-V	66Kb / 3P	Band Switching Diodes Rev. 1.6, 05-Aug-10
Guangdong Kexin Industr...	BA682	32Kb / 1P	Band-switching diodes
Rohm	1SS356	1Mb / 8P	Band Switching Diodes
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	DAP236U	1Mb / 8P	Band Switching Diodes
	1SS390SM	1Mb / 8P	Band Switching Diodes
Panasonic Semiconductor	MA2C856	42Kb / 2P	Band Switching Diodes
Vishay Siliconix	BA782-V	63Kb / 3P	Band Switching Diodes Rev. 1.4, 05-Aug-10
Vishay Siliconix	BA282	114Kb / 4P	Band Switching Diodes Rev. 1.7, 05-Dec-07

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