Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2415 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2415 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 90 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website:www.iscsemi.cn |
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