Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SC3310 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SC3310 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 5 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3310 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=3A ; VCE=5V 12 hFE-2 DC current gain IC=5A ; VCE=5V 8 Switching times Tr Rise time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=4A ;IB1=-IB2=0.4A VCC≈200V;RL=10Ω 1.0 μs |
Ähnliche Teilenummer - 2SC3310 |
|
Ähnliche Beschreibung - 2SC3310 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |