Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3412 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3412 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3412 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE= 1300V; RBE= 0 0.5 mA Switching Times tstg Storage Time 3 μs tf Fall Time IC= 5A; IB1 = 1A 0.2 μs isc Website:www.iscsemi.cn |
Ähnliche Teilenummer - 2SC3412 |
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Ähnliche Beschreibung - 2SC3412 |
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