Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3458 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3458 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3458 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.2A ; VCE=5V 10 40 hFE-2 DC current gain IC=1A ; VCE=5V 8 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 60 pF fT Transition frequency IC=0.2A ; VCE=10V 15 MHz Switching times ton Turn-on time 0.5 μs tstg Storage time 3.0 μs tf Fall time IC=2A;RL=200Ω IB1=0.4A; IB2=-0.8A VCC=400V 0.3 μs hFE-1 Classifications K L M 10-20 15-30 20-40 |
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