Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3527 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3527 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 25 A IB B Base Current-Continuous 6 A Collector Power Dissipation @ TC=25℃ 100 PC Collector Power Dissipation @ Ta=25℃ 3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
Ähnliche Teilenummer - 2SC3527 |
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Ähnliche Beschreibung - 2SC3527 |
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