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BYG24J Datenblatt(PDF) 3 Page - Vishay Siliconix |
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BYG24J Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 4 page BYG24D thru BYG24J Vishay General Semiconductor Document Number: 88960 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Forward Current vs. Forward Voltage Figure 4. Average Forward Current vs. Ambient Temperature 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 2.5 3.0 Forward Voltage (V) T J = 150 °C T J = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Ambient Temperature (°C) 100 80 60 40 20 0 120 140 160 V R = VRRM Half Sine-Wave RθJA = 25 K/W RθJA = 125 K/W RθJA = 150 K/W Figure 5. Diode Capacitance vs. Reverse Voltage 0 5 10 15 20 25 30 0.1 1 10 100 Reverse Voltage (V) f = 1 MHz 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) Cathode Band 0 (0) DO-214AC (SMA) Mounting Pad Layout 0.074 (1.88) MAX. 0.208 (5.28) REF. 0.066 (1.68) MIN. 0.060 (1.52) MIN. |
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