Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3636 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3636 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3636 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 500 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA ICES Collector cut-off current VCE=900V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=0.8A ; VCE=5V 8 Switching times ts Storage time 3.0 μs tf Fall time VCC=200V;IC=4A; IB1=0.8A; IB2=-1.6A 0.1 0.2 μs |
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Ähnliche Beschreibung - 2SC3636 |
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