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2SC3835 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer 2SC3835
Bauteilbeschribung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3835 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3835
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
120
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
1.2
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
100
μA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
100
μA
hFE
DC Current Gain
IC= 3A ; VCE= 4V
70
220
fT
Current-Gain—Bandwidth Product
IE= -0.5A ; VCE= 12V
30
MHz
COB
Output Capacitance
IE=0 ; VCB=10V;ftest=1.0MHz
110
pF
Switching times
ton
Turn-on Time
0.5
μs
tstg
Storage Time
3.0
μs
tf
Fall Time
IC= 3A ;IB1=0.3A; IB2= -0.6A
RL= 16.7Ω; VCC= 50V
0.5
μs
hFE Classifications
O
Y
G
70-120
100-200
160-220
isc Website：www.iscsemi.cn
2


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