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LB11988 Datenblatt(PDF) 2 Page - Sanyo Semicon Device |
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LB11988 Datenblatt(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page LB11988 No.6211-2/6 Electrical Characteristics at Ta = 25°C, VCC = 12V, VS = 12V Ratings Parameter Symbol Conditions min typ max Unit VCC current drain ICC RL = 560Ω (Y) 15 24 mA Output VOsat1 IO = 500mA, Rf = 0.5Ω, Sink + Source (Saturation prevention function included) 2.1 2.6 V Output saturation voltage VOsat2 IO = 1.0A, Rf = 0.5Ω, Sink + Source (Saturation prevention function included) 2.6 3.5 V Output leakage current IOleak 1.0 mA Hall amplifier Input offset voltage Voff (HALL) -6 +6 mV Input bias current Vb (HALL) VIN, WIN 1 3 μA Common-mode input voltage Vcm (HALL) 3 VCC-3 V FR Threshold voltage VFRTH 4 8 V Input bias current Ib (FR) -5 μA Current limiter LIM pin current limit level ILIM Rf = 0.5 Ω, With the Hall input logic states fixed (U, V, W = high, high, low) 1 A Saturation Saturation prevention circuit lower side voltage setting VOsat (DET) RL = 560 Ω (Y), Rf = 0.5Ω, The voltage between each output and the corresponding Rf. 0.28 V FG amplifier Upper side output saturation voltage Vsatu (SH) 11.8 V Lower side output saturation voltage Vsatd (SH) 0.3 V Hysteresis Vhys 23 mV TSD operating temperature T-TSD Design target value* 170 °C Note * : Items shown to be design target values in the conditions column are not measured. Package Dimensions unit : mm (typ) 3007B SANYO : DIP-18(300mil) 1 9 18 10 24.0 (1.84) 2.54 1.2 0.5 Pd max – Ta 0 1.2 1.13 1.0 0.6 0.4 0.8 0.2 1.4 – 30 90 30 60 75 0 120 Ambient temperature, Ta – °C |
Ähnliche Teilenummer - LB11988 |
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Ähnliche Beschreibung - LB11988 |
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