Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD401 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD401 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD401 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 200 V V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IB=0 5 V VCEsat Collector-emitter saturation voltage IC=500m A;IB=50m A 1.0 V ICBO Collector cut-off current VCB=150V; IE=0 50 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE DC current gain IC=0.4A ; VCE=10V 40 400 fT Transition frequency IC=0.4A ; VCE=10V 5 MHz hFE classifications R O Y G 40-80 70-140 120-240 200-400 |
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Ähnliche Beschreibung - 2SD401 |
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