Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1186 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1186 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1186 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 800 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.3A ; VCE=5V 10 30 Switching times tf Fall time 1.0 μs ts Storage time IC=4A ;IB1=0.8A; IB2=-2A 1.0 μs |
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Ähnliche Beschreibung - 2SD1186 |
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