Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1193 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1193 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1193 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 60 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 70 V VCEsat Collector-emitter saturation voltage IC=7A ;IB=14mA 1.5 V VBEsat Base-emitter saturation voltage IC=7A ;IB=14mA 2.0 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA hFE DC current gain IC=7A ; VCE=2V 2000 fT Transition frequency IC=7A ; VCE=5V 20 MHz |
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