Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1267A Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1267A Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1267 2SD1267A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1267 60 VCEO Collector-emitter voltage 2SD1267A IC=30mA ,IB=0 80 V VCEsat Collector-emitter saturation voltage IC=4A, IB=0.4A 1.5 V VBE Base-emitter voltage IC=3A ; VCE=4V 2.0 V IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA 2SD1267 VCE=30V; IB=0 ICEO Collector cut-off current 2SD1267A VCE=60V; IB=0 0.7 mA 2SD1267 VCE=60V; VBE=0 ICES Collector cut-off current 2SD1267A VCE=80V; VBE=0 0.4 mA hFE-1 DC current gain IC=1A ; VCE=4V 70 250 hFE-2 DC current gain IC=3A ; VCE=4V 15 fT Transition frequency IC=0.5A; VCE=5V,f=1MHz 20 MHz Switching times ton Turn-on time 0.4 μs tstg Storage time 1.5 μs tf Fall time IC=4A;IB1=-IB2=0.4A VCC=50V 0.5 μs hFE-1 Classifications Q P 70-150 120-250 |
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Ähnliche Beschreibung - 2SD1267A |
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