Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1294 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1294 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1294 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=100mA ;IB=0 45 75 V VCBO Collector-base breakdown voltage IC=100mA ;IE=0 45 75 V VCEsat-1 Collector-emitter saturation voltage IC=0.5A ;IB=1mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1A; IB=1mA 2.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.8 V IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V 2000 20000 |
Ähnliche Teilenummer - 2SD1294 |
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Ähnliche Beschreibung - 2SD1294 |
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