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2SD1667 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1667 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 4 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1134 ・Low collector saturation voltage APPLICATIONS ・Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 9 A Ta=25℃ 2 PC Collector dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-220F) and symbol |
Ähnliche Teilenummer - 2SD1667 |
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Ähnliche Beschreibung - 2SD1667 |
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