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2SD1765 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1765 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1765 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50μA; IC=0 100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=1mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=1A ; VCE=2V 1000 10000 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 25 pF |
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