Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD2498 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2498 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2498 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 0.9 1.2 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=4A ; VCE=5V 5 9 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 95 pF fT Transition frequency IC=0.1A ; VCE=10V 2 MHz Switching times : ts Storage time 7 10 μs tf Fall time ICP=4A;IB1=0.8A fH =15.75kHz 0.4 0.7 μs |
Ähnliche Teilenummer - 2SD2498 |
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Ähnliche Beschreibung - 2SD2498 |
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