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BD227 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teilenummer BD227
Bauteilbeschribung  isc Silicon PNP Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
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BD227 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD227/229/231
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD227
-45
BD229
-60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD231
IC= -100mA ; IB= 0
-80
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
B
-0.8
V
VBE(on)
Base-Emitter On Voltage
IC= -1A; VCE= -2V
-1.3
V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
VCB= -30V; IE= 0,TC= 125℃
-0.1
-10
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-10
μA
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
25
hFE-2
DC Current Gain
IC= -1A ; VCE= -2V
25
hFE-3
DC Current Gain
IC= -0.15A ; VCE= -2V
40
250
fT
Current-Gain—Bandwidth Product
IC= -50mA ; VCE= -5V
50
MHz
isc Website：www.iscsemi.cn
2


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